Počet záznamů: 1
GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD
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SYSNO ASEP 0484348 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD Tvůrce(i) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Vyskočil, Jan (FZU-D) RID
Zíková, Markéta (FZU-D) RID
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Petříček, Otto (FZU-D) RIDCelkový počet autorů 6 Číslo článku 025502 Zdroj.dok. Materials Research Express. - : Institute of Physics Publishing
Roč. 4, č. 2 (2017), s. 1-8Poč.str. 8 s. Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova GaAsSb ; InAs ; InGaAs ; quantum dot ; solar cells ; MOVPE Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) CEP GP14-21285P GA ČR - Grantová agentura ČR LO1603 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora FZU-D - RVO:68378271 UT WOS 000415123000002 EID SCOPUS 85014381997 DOI 10.1088/2053-1591/aa598e Anotace Type-II band alignment offers several advantages for proposed intermediate band solar cell structures. We focused on the quantum dot (QD) solar cell structures based on type-II InAs/GaAs QD layers capped with GaAsSb strain reducing layers. The GaAsSb strain reducing layers were prepared with or without graded Sb concentration. Strong enhancement of photocurrent was achieved by adding an InGaAs buffer layer under the type-II QD structure, thanks to improved electron extraction from QDs. For comparison, a structure with GaAs-capped InAs QDs was prepared, too. Properties of all structures are compared and the mechanism of carrier extraction or relaxation is discussed. Gradient of antimony concentration in a strain reducing layer (SRL) significantly improved resulting properties of solar cell structures. It is shown that in a multiple-QD structure with a GaAsSb SRL, electrons and holes have non-intersecting trajectories which prevents carrier recombination and improves the efficiency of solar cell structures. NextNano band structure calculations of different types of structures support our experimental results. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2018
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