Počet záznamů: 1
Structural and optical properties of vanadium ion-implanted GaN
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SYSNO ASEP 0479636 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Structural and optical properties of vanadium ion-implanted GaN Tvůrce(i) Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Sofer, Z. (CZ)
Klímová, K. (CZ)
Sedmidubský, D. (CZ)
Mikulics, M. (DE)
Lorinčík, Jan (URE-Y)
Veselá, D. (CZ)
Bottger, R. (DE)
Akhmadaliev, S. (DE)Celkový počet autorů 11 Zdroj.dok. Nuclear Instruments & Methods in Physics Research Section B. - : Elsevier - ISSN 0168-583X
Roč. 406, SEP (2017), s. 53-57Poč.str. 5 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova GaN implantation ; RBS-channelling ; optical properties of metal-implanted GaN Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače Obor OECD Nuclear physics Vědní obor RIV – spolupráce Ústav fotoniky a elektroniky - Elektronika a optoelektronika, elektrotechnika CEP GA13-20507S GA ČR - Grantová agentura ČR GA15-01602S GA ČR - Grantová agentura ČR LM2015056 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora UJF-V - RVO:61389005 ; URE-Y - RVO:67985882 UT WOS 000409152800012 EID SCOPUS 85009754176 DOI 10.1016/j.nimb.2017.01.010 Anotace The field of advanced electronic and optical devices searches for a new generation of transistors and lasers. The practical development of these novel devices depends on the availability of materials with the appropriate magnetic and optical properties, which is strongly connected to the internal morphology and the structural properties of the prepared doped structures. In this contribution, we present the characterisation of V ion-doped GaN epitaxial layers. GaN layers, oriented along the (0001) crystallographic direction, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates were implanted with 400 keV V+ ions at fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Elemental depth profiling was accomplished by Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) to obtain precise information about the dopant distribution. Structural investigations are needed to understand the influence of defect distribution on the crystal-matrix recovery and the desired structural and optical properties. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy to get a comprehensive insight into the structural modification of implanted GaN and to study the influence of subsequent annealing on the crystalline matrix reconstruction. Photoluminescence measurement was carried out to check the optical properties of the prepared structures. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2018
Počet záznamů: 1