Počet záznamů: 1

Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

SYSNO ASEP	0474047
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
Tvůrce(i)	Zíková, Markéta (FZU-D)_RID Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Oswald, Jiří (FZU-D)_{RID, ORCID} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI}
Celkový počet autorů	5
Zdroj.dok.	Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248 Roč. 464, Apr (2017), s. 59-63
Poč.str.	5 s.
Jazyk dok.	eng - angličtina
Země vyd.	NL - Nizozemsko
Klíč. slova	MOVPE ; quantum dot ; strain reducing layer ; InAs ; GaAsSb ; InGaAs
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
Obor OECD	Condensed matter physics (including formerly solid state physics, supercond.)
CEP	LO1603 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
Institucionální podpora	FZU-D - RVO:68378271
UT WOS	000398873500011
EID SCOPUS	85015385142
DOI	10.1016/j.jcrysgro.2016.11.110
Anotace	InAs/GaAs QD HS with different covering layers (CLs) prepared by MOVPE are compared. The recombination energy of a structure covered only by GaAs depends nonlinearly on CL thickness. Experimental data of PL were supported by theoretical simulations. These simulations prove that the strain plays a major role. Due to the strain reduction, the recombination energy is decreased, so the structure has longer PL wavelength. By theoretical simulations it was shown that for high content of In in InGaAs covering layer (45% and more), the heterostructure is type II, which would normally be unreachable for flat layers. For the structure with GaAsSb SRL, the band alignment is highly dependent on the SRL composition. The type I/type II transition occurs for approximately 15% of Sb, this value also slightly depends on the QD size. All structures were also studied by HRTEM to show different behavior of the CLs on the interface with InAs which highly influences the structure quality.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2018

Počet záznamů: 1