Počet záznamů: 1
Silicon Nanophotonics. Basic Principles, Present Status, and Perspectives
- 1.
SYSNO ASEP 0471613 Druh ASEP M - Kapitola v monografii Zařazení RIV C - Kapitola v knize Název Band structure of silicon nanocrystals Tvůrce(i) Kůsová, Kateřina (FZU-D) RID, ORCID
Hapala, Prokop (FZU-D) RID, ORCID
Jelínek, Pavel (FZU-D) RID, ORCID
Pelant, Ivan (FZU-D) RID, ORCID, SAIZdroj.dok. Silicon Nanophotonics. Basic Principles, Present Status, and Perspectives. - Singapore : Pan Stanford Publishing, 2016 / Khriachtchev L. - ISBN 978-981-4669-76-4 Rozsah stran s. 109-144 Poč.str. 36 s. Poč.str.knihy 503 Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. SG - Singapur Klíč. slova silicon nanocrystals ; band structure ; luminescence properties Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GBP108/12/G108 GA ČR - Grantová agentura ČR GPP204/12/P235 GA ČR - Grantová agentura ČR GA14-02079S GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 DOI 10.1201/9781315364797-5 Anotace This chapter puts on a rigorous basis the concept of electronic band structure in semiconductor nanocrystals. We show that, down to a certain limit, this concept has still reasonable meaning, even if the band structure becomes gradually “fuzzy” and minigaps appear within the allowed energy bands with decreasing nanocrystal size. The nanocrystals basically remember the basic features of their “parent” bulk material. In particular, we demonstrate that hydrogen-capped silicon nanocrystals, fully relaxed geometrically and electronically, retain the indirect-bandgap structure down to ≤2 nm. Moreover, we reveal, both computationally and experimentally, that mechanical (tensile) strain applied to the Si nanocrystals via proper surface capping makes these nanocrystals a direct-bandgap material, putting them on a par with standard direct-bandgap semiconductors like GaAs. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
Počet záznamů: 1