Počet záznamů: 1
Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells
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SYSNO ASEP 0471531 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells Tvůrce(i) Seif, J. (CH)
Descoeudres, A. (CH)
Nogay, G. (CH)
Hänni, S. (CH)
de Nicolas, S.M. (CH)
Holm, N. (CH)
Geissbühler, J. (CH)
Hessler-Wyser, A. (CH)
Duchamp, M. (DE)
Dunin-Borkowski, R.E. (DE)
Ledinský, Martin (FZU-D) RID, ORCID, SAI
De Wolf, S. (CH)
Ballif, C. (CH)Celkový počet autorů 13 Zdroj.dok. IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers - ISSN 2156-3381
Roč. 6, č. 5 (2016), s. 1132-1140Poč.str. 9 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova microcrystalline silicon ; nanocrystalline silicon ; silicon heterojunctions (SHJs) ; solar cells Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP LM2015087 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora FZU-D - RVO:68378271 UT WOS 000388963600011 EID SCOPUS 84975298269 DOI 10.1109/JPHOTOV.2016.2571619 Anotace Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest doping efficiencies, parasitic optical absorption when applied at the front of solar cells, and high contact resistivities with the adjacent transparent electrodes. Their substitution by equally thin doped nanocrystalline silicon layers has often been argued to resolve these drawbacks. However, low-temperature deposition of highly crystalline doped layers of such thickness on amorphous surfaces demands sophisticated deposition engineering. In this paper, we review and discuss different strategies to facilitate the nucleation of nanocrystalline silicon layers and assess their compatibility with SHJ solar cell fabrication. We also implement the obtained layers into devices, yielding solar cells with fill factor values of over 79% and efficiencies of over 21.1%, clearly underlining the promise this material holds for SHJ solar cell applications. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
Počet záznamů: 1