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Thermoelectric nanocrystalline YbCoSb laser prepared layers
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SYSNO ASEP 0470066 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Thermoelectric nanocrystalline YbCoSb laser prepared layers Tvůrce(i) Jelínek, Miroslav (FZU-D) RID, ORCID
Zeipl, Radek (FZU-D) RID
Kocourek, Tomáš (FZU-D) RID, ORCID, SAI
Remsa, Jan (FZU-D) RID, ORCID
Navrátil, Jiří (UMCH-V) RIDCelkový počet autorů 5 Číslo článku 155 Zdroj.dok. Applied Physics A - Materials Science & Processing. - : Springer - ISSN 0947-8396
Roč. 122, č. 3 (2016), s. 1-5Poč.str. 5 s. Jazyk dok. eng - angličtina Země vyd. DE - Německo Klíč. slova nanocrystalline YbCoSb ; thermoelectric layers ; pulsed laser deposition Vědní obor RIV BM - Fyzika pevných látek a magnetismus Vědní obor RIV – spolupráce Ústav makromolekulární chemie - Anorganická chemie CEP GA13-33056S GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 ; UMCH-V - RVO:61389013 UT WOS 000371041700014 EID SCOPUS 85007236144 DOI 10.1007/s00339-016-9685-7 Anotace Filled thermoelectric YbxCo4Sb12 layers were prepared by pulsed laser deposition method. The Yb0.19Co4Sb12 target was fabricated by hot pressing. Various deposition conditions were tested: target-substrate distance d(T-S) (4 or 6 cm), ambient argon pressure (from 0.5 to 13 Pa), laser repetition rate (from 3 to 10 Hz), substrate temperature (from 250 to 400 degrees C) and laser fluence (in region from 0.8 to 5 J cm(-2)). Film roughness was determined by mechanical profilometer and by AFM. For d(T-S) = 4 cm we observed a deficit of Yb and surplus of Co. Sb was transferred from target to film roughly stoichiometrically (as measured by EDX). Films created at 0.8 J cm(-2) exhibited generally poor stoichiometry and mechanical properties. Optimal conditions and stoichiometric transport were found for d(T-S) = 6 cm and 13 Pa of Ar. XRD shows that the films were nanocrystalline with CoSb3 structure. Grain size was in the range of similar to 50-80 nm. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
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