Počet záznamů: 1
Preparation and optical properties of nanocrystalline diamond coatings for infrared planar waveguides
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SYSNO ASEP 0467513 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Preparation and optical properties of nanocrystalline diamond coatings for infrared planar waveguides Tvůrce(i) Remeš, Zdeněk (FZU-D) RID, ORCID
Babchenko, Oleg (FZU-D) RID, ORCID
Varga, Marián (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Jirásek, Vít (FZU-D) RID
Prajzler, Václav (FZU-D) RID
Nekvindová, P. (CZ)
Kromka, Alexander (FZU-D) RID, ORCID, SAIZdroj.dok. Thin Solid Films. - : Elsevier - ISSN 0040-6090
Roč. 618, Nov (2016), s. 130-133Poč.str. 4 s. Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova hydrogenated amorphous silicon ; nanocrystalline diamond ; planar waveguides Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GA14-05053S GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 UT WOS 000389112000024 EID SCOPUS 84995890844 DOI 10.1016/j.tsf.2016.04.026 Anotace The high index of refraction planar optical waveguides operating in the near infrared spectrum were prepared from the intrinsic a-Si:H layer coated by NCD. The a-Si:H layers were grown by radio frequency plasma enhanced chemical vapor deposition on glass substrates from silane and hydrogen mixture at the substrate temperature about 250°C followed at 210°C by the NCD coating grown by the microwave plasma enhanced chemical vapor deposition from hydrogen rich plasma with adding methane and carbon dioxide at the substrate temperature. The optical absorptance spectra, Raman spectra and scanning electron microscopy reveal the diamond character of the NCD coatings as well as the stability of a-Si:H layer during NCD deposition. The FEM simulations show that the near infrared optical absorption coefficient of the NCD coating must be reduced below 10/cm to reduce the optical attenuation below 1 dB/cm in the planar waveguide with the 50 nm thick NCD coating.
Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
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