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Thin film polycrystalline Si solar cells studied in transient regime by optical pump-terahertz probe spectroscopy
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SYSNO ASEP 0455242 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Thin film polycrystalline Si solar cells studied in transient regime by optical pump-terahertz probe spectroscopy Tvůrce(i) Pikna, Peter (FZU-D) RID
Skoromets, Volodymyr (FZU-D) RID
Becker, C. (DE)
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Kužel, Petr (FZU-D) RID, ORCID, SAIZdroj.dok. Applied Physics Letters. - : AIP Publishing - ISSN 0003-6951
Roč. 107, č. 23 (2015), "233901-1"-"233901-5"Poč.str. 5 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova thin film polycrystalline silicon ; terahertz spectroscopy ; passivation ; Suns-Voc method ; defects Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GA13-12386S GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 UT WOS 000367010800068 EID SCOPUS 84949199135 DOI https://doi.org/10.1063/1.4937388 Anotace We used time-resolved terahertz spectroscopy to study ultrafast photoconductivity of polycrystalline thin-film silicon solar cells. We selected a series of samples, which exhibited variable conversion efficiencies due to hydrogen plasma passivation under various technological conditions. The decay of the transient terahertz conductivity shows two components: the fast one is related to the charge recombination at interfaces, while the slow nanosecond one is attributed to the trapping of photocarriers by defects localized at grain boundaries or at dislocations in the polycrystalline p- layer of the structure. We observed a clear correlation between the open-circuit voltage and the nanosecond-scale decay time of the transient terahertz conductivity of the solar cells. Thus, the terahertz spectroscopy appears to be a useful contactless tool for inspecting the local photoconductivity of solar cells including, in particular, various nanostructured schemes. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2016
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