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Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magneticshape memory effect
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SYSNO ASEP 0454555 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magneticshape memory effect Tvůrce(i) Heczko, Oleg (FZU-D) RID, ORCID
Drahokoupil, Jan (FZU-D) RID, ORCID
Straka, L. (FI)Zdroj.dok. Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 117, č. 17 (2015), "17E703-1"-"17E703-4"Poč.str. 4 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova field-induced strain ; temperature-dependence ; alloy ; martensite ; Ni2MnGa ; anisotropy Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GAP107/11/0391 GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 UT WOS 000354984100527 EID SCOPUS 84924030973 DOI 10.1063/1.4913726 Anotace Enhanced magnetic hysteresis due to boron doping in combination with magnetic shape memory effect in Ni-Mn-Ga single crystal results in new interesting functionality of magnetic shape memory (MSM) alloys such as mechanical demagnetization. In Ni50.0Mn28.5Ga21.5 single crystal, the boron doping increased magnetic coercivity from few Oe to 270 Oe while not affecting the transformation behavior and 10 M martensite structure. However, the magnetic field needed for MSM effect also increased in doped sample. The magnetic behavior is compared to undoped single crystal of similar composition. The evidence from the X-ray diffraction, magnetic domain structure, magnetization loops, and temperature evolution of the magnetic coercivity points out that the enhanced hysteresis is caused by stress-induced anisotropy.
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