Počet záznamů: 1  

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

  1. 1.
    SYSNO ASEP0448593
    Druh ASEPJ - Článek v odborném periodiku
    Zařazení RIVJ - Článek v odborném periodiku
    Poddruh JČlánek ve WOS
    NázevMOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
    Tvůrce(i) Zíková, Markéta (FZU-D) RID
    Hospodková, Alice (FZU-D) RID, ORCID
    Pangrác, Jiří (FZU-D) RID
    Oswald, Jiří (FZU-D) RID, ORCID
    Krčil, Pavel (FZU-D)
    Hulicius, Eduard (FZU-D) RID
    Komninou, Ph. (GR)
    Kioseoglou, J. (GR)
    Zdroj.dok.Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
    Roč. 414, Mar (2015), 167-171
    Poč.str.5 s.
    Jazyk dok.eng - angličtina
    Země vyd.NL - Nizozemsko
    Klíč. slovalong emission wavelength ; photocurrent ; InAs quantum dots ; MOVPE ; GaAsSb layer
    Vědní obor RIVBM - Fyzika pevných látek a magnetismus
    CEPGA13-15286S GA ČR - Grantová agentura ČR
    LM2011026 GA MŠk - Ministerstvo školství, mládeže a tělovýchovy
    Institucionální podporaFZU-D - RVO:68378271
    UT WOS000349602900030
    EID SCOPUS84922565864
    DOI10.1016/j.jcrysgro.2014.09.053
    AnotacePreparation and properties of InAs/GaAs quantum dots prepared by the MOVPE covered by GaAsSb SRL with extremely long emission wavelength at 1.8 µm is presented. The prolongation of the emission wavelength was achieved by the introduction of GaAsSb SRL with Sb content of about 30% in the solid phase. The high Sb concentration in the SRL causes the preservation of QD size, it prolongs the PL wavelength. Furthermore, high content of antimony leads to a creation of type II heterostructure for which a red shift of the PL wavelength and decrease of the PL intensity is typical. Low PL intensity may complicate light emitting applications; however, fast separation of carriers in the type II structure is an advantage for detector or solar cell application, especially with the long working wavelength. With respect to the perspective application of this structure, the photocurrent measurement was chosen as the complementary characterization method.
    PracovištěFyzikální ústav
    KontaktEva Pulcmanová, pulcman@fzu.cz, Tel.: 220 318 579
    Rok sběru2016