Počet záznamů: 1
Growth rate enhancement and morphology engineering of diamond films by adding CO.sub.2./sub. or N.sub.2./sub. in hydrogen rich gas chemistry
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SYSNO ASEP 0432636 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Ostatní články Název Growth rate enhancement and morphology engineering of diamond films by adding CO2 or N2 in hydrogen rich gas chemistry Tvůrce(i) Ižák, Tibor (FZU-D) RID
Davydova, Marina (FZU-D) RID, ORCID
Varga, Marián (FZU-D) RID, ORCID
Potocký, Štěpán (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAIZdroj.dok. Advanced Science, Engineering and Medicine - ISSN 2164-6627
Roč. 6, č. 7 (2014), s. 749-755Poč.str. 7 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova microwave plasma CVD ; diamond growth ; nitrogen ; carbon dioxide ; growth rate ; SEM Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP FR-TI2/736 GA MPO - Ministerstvo průmyslu a obchodu GAP205/12/0908 GA ČR - Grantová agentura ČR GP14-16549P GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 DOI 10.1166/asem.2014.1571 Anotace Diamond films and structures were grown by MWCVD. We show that increasing of CH4 concentration in the gas mixture up to 8% results almost in a linear increasing of growth rate (up to 900 nm/h). Unfortunately, diamond film quality decreases due to the dominance of sp2 carbon phases, as confirmed by Raman measurements. Furthermore, increasing of CH4 concentration also enhances spontaneous nucleation. Addition of N2 and CO2 into CH4/H2 gas mixture also enhances the growth rate. Nitrogen shifts the film morphology from micro- to nanocrystalline. For enough high methane concentration (>5% CH4), increasing of nitrogen further shifts the diamond growth in formation of nanowire like structures. In opposite to the nitrogen addition, adding CO2 to the gas mixture improved the film quality. In this case, a higher methane concentration can be used to increase the growth rate while keeping good enough film quality. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2015
Počet záznamů: 1