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ZnO thin films prepared by surfatron produced discharge

SYSNO ASEP	0430438
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	ZnO thin films prepared by surfatron produced discharge
Tvůrce(i)	Olejníček, Jiří (FZU-D)_{RID, ORCID} Šmíd, Jiří (FZU-D) Čada, Martin (FZU-D)_{RID, ORCID, SAI} Kment, Š. (CZ) Churpita, Olexandr (FZU-D)_{RID, ORCID} Kšírová, Petra (FZU-D)_{RID, ORCID} Brunclíková, Michaela (FZU-D)_RID Adámek, Petr (FZU-D)_{RID, ORCID} Kohout, Michal (FZU-D)_{RID, ORCID} Valvoda, V. (CZ) Chvostová, Dagmar (FZU-D)_{RID, SAI, ORCID} Zlámal, M. (CZ) Hubička, Zdeněk (FZU-D)_{RID, ORCID, SAI}
Zdroj.dok.	Catalysis Today. - : Elsevier - ISSN 0920-5861 Roč. 230, Jul (2014), s. 119-124
Poč.str.	6 s.
Jazyk dok.	eng - angličtina
Země vyd.	NL - Nizozemsko
Klíč. slova	ZnO ; surfatron ; thin films ; Langmuir probe ; plasma density
Vědní obor RIV	BL - Fyzika plazmatu a výboje v plynech
CEP	TA01011740 GA TA ČR - Technologická agentura ČR
	LH12045 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
	GAP108/12/1941 GA ČR - Grantová agentura ČR
	GAP205/11/0386 GA ČR - Grantová agentura ČR
Institucionální podpora	FZU-D - RVO:68378271
UT WOS	000333800300020
EID SCOPUS	84897582825
DOI	10.1016/j.cattod.2013.11.024
Anotace	Multi plasma jet system with 4 independent nozzles working on the principle of surface-wave discharge (SWD) has been developed. The system was optimized and used for plasma-enhanced chemical vapor deposition (PECVD) of nominally pure and Al and Mn doped ZnO thin films. The surfatron source was powered by a microwave magnetron generator working at a frequency of 2.45 GHz with the output power of 300 W per surfatron. The time-resolved properties of low-pressure plasma jet working under deposition conditions in pulse mode were studied using Langmuir probe. It was found that the plasma density inside the active plasma jet is about 1017 m-3 and electron effective temperature can reach approximately 3 eV. The set of ZnO samples with a thickness of 300 nm were prepared on Si, ITO and quartz substrate and were analyzed by XRD, SEM, EDX, UV-light amperometry and optical ellipsometry. All samples under study were crystalline in nature, revealed n-type conductivity.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2015

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