Počet záznamů: 1
Mn doped GaN thin films and nanoparticles
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SYSNO ASEP 0388009 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Mn doped GaN thin films and nanoparticles Tvůrce(i) Šofer, Z. (CZ)
Sedmidubský, D. (CZ)
Huber, Š. (CZ)
Hejtmánek, Jiří (FZU-D) RID, ORCID
Macková, Anna (UJF-V) RID, ORCID, SAI
Fiala, R. (CZ)Zdroj.dok. International Journal of Nanotechnology - ISSN 1475-7435
Roč. 9, 8-9 (2012), s. 809-824Poč.str. 16 s. Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova GaN nanoparticles ; GaN thin films ; manganese ; transition metals ; MOVPE ; ion implantations Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GA104/09/0621 GA ČR - Grantová agentura ČR CEZ AV0Z10100521 - FZU-D (2005-2011) AV0Z10480505 - UJF-V (2005-2011) UT WOS 000303800500009 DOI 10.1504/IJNT.2012.046754 Anotace Magnetically doped GaN in the form of thin films and nanoparticles has been investigated. The Mn doped GaN layers were grown on sapphire substrates by MOVPE. The influence of deposition condition on surface morphology, magnetic and structural properties was investigated. GaN:Mn epitaxial layers exhibit magnetic moment persisting up to room temperature. The magnetically doped layers were also prepared by ion implantation of GaN layers by Mn. The influence of free carrier concentration and other parameters on magnetic properties were investigated. The pure and transition metal (Cr, Mn and Fe) doped GaN nanoparticles were synthesised by decomposition of fluoride-based complex compound in ammonia atmosphere. Mn doped nanoparticles exhibit pure paramagnetic behaviour. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2013
Počet záznamů: 1