Počet záznamů: 1
Structural and optical properties study of GaN implanted by various rare earth ions
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SYSNO ASEP 0382664 Druh ASEP C - Konferenční příspěvek (mezinárodní konf.) Zařazení RIV Záznam nebyl označen do RIV Název Structural and optical properties study of GaN implanted by various rare earth ions Tvůrce(i) Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Sofer, Z. (CZ)
Sedmidubský, D. (CZ)
Kormunda, M. (CZ)Celkový počet autorů 5 Zdroj.dok. Program and Abstract Book. -, 2012 Poč.str. 1 s. Akce The 18th International Conference on Ion Beam Modifications of Materials Datum konání 02.09.2012-07.09.2012 Místo konání Qingdao Země CN - Čína Jazyk dok. eng - angličtina Země vyd. CN - Čína Klíč. slova implantation ; RBS channelling Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače Vědní obor RIV – spolupráce Elektronika a optoelektronika, elektrotechnika CEP 106/09/0125 GA AV ČR - Akademie věd Institucionální podpora UJF-V - RVO:61389005 Anotace We present a structural study of rare earth elements implanted GaN layers grown by low pressure metal organic vapour phase epitaxy on c-plane sapphire substrates. Sm, Tm, Eu, Tb and Ho ions were implanted with energies of 200 and 400 keV and fluences ranging from 1×1015 to 1×1016 cm−2 into GaN with (0001) crystallographic orientation. The chemical composition and concentration profiles of ion-implanted layers were studied by Rutherford Back-Scattering spectrometry (RBS) and compared to SRIM 2008 simulations. With the increasing fluence and lower ion energy used at implantation we observed disagreement of experimental and predicted depth profiles of implanted ions, which is connected with the structural changes of the surface. The structural properties of the layers were characterized by RBS channelling, Raman spectroscopy and X-ray diffraction. AFM was used to determine the surface morphology changes after implantation. Structural analysis shows the amount of disordered atoms in the surface layer and in the depth of projected range of implanted ions. The comparable density of disordered atoms exhibit samples implanted by Tb, Sm and Eu, 400 keV implanted at fluence at 5x1015 cm-2 in depth appropriate to the projected range Rp and Ga enrichment is observed in the surface layer. The lowest level of modification of the surface layer in the Rp depth exhibit GaN implanted by Tb and Eu, 400 keV using fluence 1x1015 cm-2. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2013
Počet záznamů: 1