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Scintillation properties of Ce doped Gd.sub.2./sub.Lu.sub.1./sub.(Ga,Al).sub.5./sub.O.sub.12./sub. single crystal grown by the micro-pulling-down method
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SYSNO ASEP 0379857 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method Tvůrce(i) Kamada, K. (JP)
Yanagida, T. (JP)
Pejchal, Jan (FZU-D) RID, ORCID
Nikl, Martin (FZU-D) RID, ORCID, SAI
Endo, T. (JP)
Tsutumi, K. (JP)
Usuki, Y. (JP)
Fujimoto, Y. (JP)
Fukabori, A. (JP)
Yoshikawa, A. (JP)Zdroj.dok. Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 352, č. 1 (2012), s. 35-38Poč.str. 4 s. Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova single crystal growth ; oxides ; scintillator materials Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000306089300009 DOI 10.1016/j.jcrysgro.2011.11.057 Anotace Ce: Gd2Lu1(Ga,Al)5O12 single crystals were grown by the micro-pulling down (m-PD) method. All grown crystals were yellow and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530nm wavelength. The decay accelerates with increasing Ga and Ce concentration. Ce1%: Gd2Lu1Ga3Al2O12 shows highest emission intensity. The light yield of Ce: Gd2Lu1Ga3Al2O12 sample with 3mmφx1mm size was around 24,000photon/MeV using calibration from 55Fe direct irradiation peak to APD. Scintillation decay time was around 50ns. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2013
Počet záznamů: 1