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Formation of CuIn.sub.1−x./sub.Al.sub.x./sub.Se.sub.2./sub. thin films studied by Raman scattering
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SYSNO ASEP 0375581 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Formation of CuIn1−xAlxSe2 thin films studied by Raman scattering Tvůrce(i) Olejníček, Jiří (FZU-D) RID, ORCID
Kamler, C.A. (US)
Darveau, S.A. (US)
Exstrom, C.L. (US)
Slaymaker, L.E. (US)
Vandeventer, A.R. (US)
Ianno, N.J. (US)
Soukup, R. J. (US)Zdroj.dok. Thin Solid Films. - : Elsevier - ISSN 0040-6090
Roč. 519, č. 16 (2011), s. 5329-5334Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova copper aluminium indium selenide ; chalcopyrites ; Raman spectroscopy ; solar cells ; X-ray diffraction Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEZ AV0Z10100522 - FZU-D (2005-2011) UT WOS 000292573500003 DOI 10.1016/j.tsf.2011.02.030 Anotace CuIn1−xAlxSe2 (CIAS) thin films (x=0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu―In―Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50–500 cm−1 with resolution of 0.3 cm−1. Sequential formation of InxSey, Cu2−xSe, CuInSe2 (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn1−xAlxSe2 products, the A1 phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm−1 to 186 cm−1. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2012
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