Počet záznamů: 1

Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

SYSNO ASEP	0364023
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction
Tvůrce(i)	Proessdorf, A. (DE) Grosse, F. (DE) Braun, W. (DE) Katmis, F. (DE) Riechert, H. (DE) Romanyuk, Olexandr (FZU-D)_{RID, ORCID}
Zdroj.dok.	Physical Review. B - ISSN 1098-0121 Roč. 83, č. 15 (2011), "155317-1"-"155317-11"
Poč.str.	11 s.
Jazyk dok.	eng - angličtina
Země vyd.	US - Spojené státy americké
Klíč. slova	III-V semiconductor surfaces ; RHEED ; surface reconstruction ; MBE
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
CEP	GPP204/10/P028 GA ČR - Grantová agentura ČR
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000292149600006
DOI	10.1103/PhysRevB.83.155317
Anotace	The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE)environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120◦ domain structure and possible disorder.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2012

Počet záznamů: 1