Počet záznamů: 1

Effect of nitrogen doping on TiO.sub.x./sub.N.sub.y./sub. thin film formation at reactive high-power pulsed magnetron sputtering

SYSNO ASEP	0358730
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering
Tvůrce(i)	Straňák, Vítězslav (FZU-D)_{RID, ORCID} Quaas, M. (DE) Bogdanowicz, R. (PL) Steffen, H. (DE) Wulff, H. (DE) Hubička, Zdeněk (FZU-D)_{RID, ORCID, SAI} Tichý, M. (CZ) Hippler, R. (DE)
Zdroj.dok.	Journal of Physics D-Applied Physics. - : Institute of Physics Publishing - ISSN 0022-3727 Roč. 43, č. 28 (2010), s. 1-7
Poč.str.	7 s.
Jazyk dok.	eng - angličtina
Země vyd.	GB - Velká Británie
Klíč. slova	magnetron sputtering ; TiO₂ ; pulse discharge ; XRD ; band gap
Vědní obor RIV	BL - Fyzika plazmatu a výboje v plynech
CEP	KAN301370701 GA AV ČR - Akademie věd
	1M06002 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
CEZ	AV0Z10100522 - FZU-D (2005-2011)
UT WOS	000279318600010
DOI	10.1088/0022-3727/43/28/285203
Anotace	The paper is focused on a study of formation of TiOxNy thin films prepared by pulsed magnetron sputtering of metallic Ti target. The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. Post-deposition thermal annealing was not employed. The chemical composition from x-ray photoelectron spectroscopy diagnostic reveals formation of TiOxNy structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N element's incorporation into the TiO lattice. Decrease in band-gap to values Eg ~ 1.6 eV in TiOxNy thin film is attributed to formed TiN bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar+, Ti+, Ti) is presented together with peak discharge current.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2012

Počet záznamů: 1