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Probing structure and microstructure of epitaxial Ni–Mn–Ga films by reciprocal space mapping and pole figure measurements
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SYSNO ASEP 0353131 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Probing structure and microstructure of epitaxial Ni–Mn–Ga films by reciprocal space mapping and pole figure measurements Tvůrce(i) Ge, Y. (FI)
Heczko, Oleg (FZU-D) RID, ORCID
Hannula, S.-P. (FI)
Fähler, S. (DE)Zdroj.dok. Acta Materialia. - : Elsevier - ISSN 1359-6454
Roč. 58, č. 20 (2010), 6665-6671Poč.str. 7 s. Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova reciprocal space mapping ; thin film ; Ni–Mn–Ga ; martensite ; magnetic shape memory Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEZ AV0Z10100520 - FZU-D (2005-2011) UT WOS 000284446500012 DOI 10.1016/j.actamat.2010.08.029 Anotace The crystal structure and complex twinning microstructure of epitaxial Ni–Mn–Ga films on (1 0 0) MgO substrates was studied by X-ray diffraction using 2θ scans, pole figure measurements and reciprocal space mapping (RSM). Above the martensitic transformation temperature the film consists of single austenite phase with lattice constant a = 5.81A at 419 K. At room temperature some epitaxially grown residual austenite with a = 5.79A remains at the interface with the substrate, followed by an intermediate layer exhibiting orthorhombic distortion, atrans = 6.05A, btrans = 5.87A, ctrans = 5.73A and a major fraction of 14M (7M) martensite, a = 6.16A, b = 5.79A, c = 5.48A. The seven-layered modulation of this metastable martensite structure is directly observed by RSM. The intermediate phase observed close to interface indicates the existence of an instable, pre-adaptive martensite phase with a short stacking period. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2011
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