Počet záznamů: 1
On the effect of oxygen flooding on the detection of noble gas ions in a SIMS instrument
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SYSNO ASEP 0349994 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název On the effect of oxygen flooding on the detection of noble gas ions in a SIMS instrument Tvůrce(i) Williams, P. (US)
Franzreb, K. (US)
Sobers Jr., R. C. (US)
Lorinčík, Jan (URE-Y)Celkový počet autorů 4 Zdroj.dok. Nuclear Instruments & Methods in Physics Research Section B. - : Elsevier - ISSN 0168-583X
Roč. 268, 17-18 (2010), s. 2758-2765Poč.str. 8 s. Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova SIMS ; noble gases ; uranium Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika CEZ AV0Z20670512 - URE-Y (2005-2011) UT WOS 000281498900033 DOI 10.1016/j.nimb.2010.05.037 Anotace We have investigated the report by Desgranges and Pasquet (2004) [1] that O2 gas flooding in a secondary ion mass spectrometer could enhance by a factor of about ~5 the Xe+ ion yield for a Xe implant in UO2 sputtered by O2+ primary ions. For a Xe implant in Si sputtered by O2+ primary ions and for Xe+ sputtering of silicon in steady state, O2 gas flooding reduced the Xe+ ion signal by a factor of about 2, presumably due to loss of Xe+ by resonant charge exchange with gas-phase oxygen molecules. The yield of a Kr co-implant in Si was unaffected by oxygen flooding. However, we demonstrate that for steady-state Ar+ sputtering of uranium, the Ar+ ion yield can be increased by a factor of ~1.7 by oxygen flooding. Pracoviště Ústav fotoniky a elektroniky Kontakt Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Rok sběru 2011
Počet záznamů: 1