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Raman mapping of microcrystalline silicon thin films with high spatial resolution
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SYSNO ASEP 0347763 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Ostatní články Název Raman mapping of microcrystalline silicon thin films with high spatial resolution Tvůrce(i) Ledinský, Martin (FZU-D) RID, ORCID, SAI
Vetushka, Aliaksi (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Kočka, Jan (FZU-D) RID, ORCID, SAIZdroj.dok. Physica Status Solidi C : Current Topics in Solid State Physics - ISSN 1862-6351
Roč. 7, 3-4 (2010), s. 704-707Poč.str. 4 s. Jazyk dok. eng - angličtina Země vyd. DE - Německo Klíč. slova Raman ; atomic force microscopy ; microcrystalline silicon Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP LC06040 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy KAN400100701 GA AV ČR - Akademie věd LC510 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy IAA100100902 GA AV ČR - Akademie věd CEZ AV0Z10100521 - FZU-D (2005-2011) DOI 10.1002/pssc.200982832 Anotace Raman maps, i.e., grids of individual spectra of Raman scattering from excitation laser beam focused by optical microscope, were used to characterize mixed phase silicon thin films. Raman maps measured with 442 nm and 785 nm lasers were compared with topography or local current maps recorded by conductive atomic force microscope (C-AFM) in the same field of view. The Raman measurement may irreversibly influence the thin film surface by thermal oxidation, as proved by the change of local conductivity observed in C-AFM. Resolution limit of individual grains in Raman mapping with 442 nm excitation was 350 nm, however, we were able to detect much smaller individual grains (down to 160 nm diameter measured by AFM) if they were isolated in amorphous matrix. Polarized Raman spectroscopy is able to detect the crystallographic orientation of the single microcrystalline grain. Resolution of the Raman mapping may be significantly improved by tip enhanced Raman measurement. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2011
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