Počet záznamů: 1

InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

SYSNO ASEP	0342440
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
Tvůrce(i)	Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Oswald, Jiří (FZU-D)_{RID, ORCID} Vyskočil, Jan (FZU-D)_RID Kuldová, Karla (FZU-D)_{RID, ORCID} Šimeček, Tomislav (FZU-D) Hazdra, P. (CZ) Caha, O. (CZ)
Zdroj.dok.	Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248 Roč. 312, č. 8 (2010), 1383-1387
Poč.str.	5 s.
Jazyk dok.	eng - angličtina
Země vyd.	NL - Nizozemsko
Klíč. slova	low dimensional structures ; photoluminescence ; low-pressure MOVPE ; InAs/GaAs quantum dots ; semiconducting III/V materials
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
CEP	IAA100100719 GA AV ČR - Akademie věd
	GA202/09/0676 GA ČR - Grantová agentura ČR
	LC510 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000277039100069
DOI	10.1016/j.jcrysgro.2009.10.057
Anotace	We compare properties of InAs/GaAs quantum dots(QDs)covered by InGaAs or GaAsSb strain reducing layers (SRLs)prepared by metalorganic vapor phase epitaxy.Stronger redshift of QD emission was achieved with InGaAs SRL as compared to GaAsSb one with similar strain in the structure. This can be caused by the increase of QD size during InGaAs SRL growth. The heterojunction between InAsQDs and GaAsSb SRL changes from type I totype II between 13% and 15%of Sb in the SRL. Important advantage of GaAsSb SRL can be the possibility to change the overlap of electron and hole wave functions and QD dipole moment orientation by the composition of GaAsSb. We have achieved the highest PL intensity suggesting best wave function overlap near 13%of Sb in the SRL. Band alignment, transition probability and transition energy were calculated to help the interpretation of achieved results.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2011

Počet záznamů: 1