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Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy
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SYSNO ASEP 0342088 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy Tvůrce(i) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Vyskočil, Jan (FZU-D) RID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCIDZdroj.dok. Surface Science. - : Elsevier - ISSN 0039-6028
Roč. 604, 3-4 (2010), 318-321Poč.str. 4 s. Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova low-pressure Metal–Organic Vapor Phase ; InAs/GaAs quantum dots ; reflectance anisotropy spectroscopy Surface reconstruction ; surface reconstruction Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP IAA100100719 GA AV ČR - Akademie věd GA202/09/0676 GA ČR - Grantová agentura ČR CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000274979000012 DOI 10.1016/j.susc.2009.11.023 Anotace The time resolved reflectance anisotropy spectroscopy (RAS) measurement at 4.2 eV was used for the optimization of technological parameters for Stranski-Krastanow quantum dot (QD) formation. RAS measurement helps us to study the MOVPE surface processes such as QD formation, dissolution of In from InAs QDs during the growth of GaAs capping layer or recovery of epitaxial surface from As deficiency, when As partial pressure is increased. We have shown, that the recovery of epitaxial surface from As deficiency is rather a slow process of the order of tens of seconds. For the first time was observed in situ the mechanism of In atoms migration from QDs during GaAs capping layer growth. First the GaAs layer is formed and then the In migration from QDs follows. These two processes do not start at the same time, the In dissolution is delayed. Conclusions extracted from RAS measurement are in agreement with photoluminescence results. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2011
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