Počet záznamů: 1
Conjugated Silicon–Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes
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SYSNO ASEP 0341918 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Conjugated Silicon–Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes Tvůrce(i) Schauer, F. (CZ)
Schauer, Petr (UPT-D) RID, SAI, ORCID
Kuřitka, I. (CZ)
Hua, B. (CN)Celkový počet autorů 4 Zdroj.dok. Materials Transactions. - : Japan Institute of Metals and Materials - ISSN 1345-9678
Roč. 51, č. 2 (2010), s. 197-201Poč.str. 5 s. Jazyk dok. eng - angličtina Země vyd. JP - Japonsko Klíč. slova ultra violet degradability ; polysilylenes ; weak bond ; conformation defect ; nanorezists Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika CEP IAA100100622 GA AV ČR - Akademie věd CEZ AV0Z20650511 - UPT-D (2005-2011) UT WOS 000276538900001 DOI 10.2320/matertrans.MC200925 Anotace The comparison of the susceptibility of aryl-substituted polysilanes to the photodegradation by electron beam (EB) and UV radiation is examined on the prototypical material, poly[methyl(phenyl)silylene] (PMPSi). The main purpose of this paper is to compare the photoluminescence (PL) and cathodoluminescence (CL) after major degradation, predominantly in the long wavelength range of 400–600 nm, studying the disorder due to dangling bonds, conformational transformations and weak bonds created by the degradation process. The UV degradation was a completely reversible process, whereas the EB degradation process was only reversible, provided certain material specific level of degradation was not exceeded. This observation supports different paths and final states in both UV and EB degradations. The results serve for the optimization of polysilane nanoresists. Pracoviště Ústav přístrojové techniky Kontakt Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Rok sběru 2011
Počet záznamů: 1