Počet záznamů: 1
Profiling N-Type Dopants in Silicon
- 1.
SYSNO ASEP 0340745 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Profiling N-Type Dopants in Silicon Tvůrce(i) Hovorka, Miloš (UPT-D)
Mika, Filip (UPT-D) RID, SAI, ORCID
Mikulík, P. (CZ)
Frank, Luděk (UPT-D) RID, SAI, ORCIDCelkový počet autorů 4 Zdroj.dok. Materials Transactions. - : Japan Institute of Metals and Materials - ISSN 1345-9678
Roč. 51, č. 2 (2010), s. 237-242Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. JP - Japonsko Klíč. slova silicon ; dopant contrast ; photoemission electron microscopy ; scanning electron microscopy Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika CEP GP102/09/P543 GA ČR - Grantová agentura ČR IAA100650803 GA AV ČR - Akademie věd CEZ AV0Z20650511 - UPT-D (2005-2011) UT WOS 000276538900008 EID SCOPUS 77949763595 DOI 10.2320/matertrans.MC200910 Anotace Variously doped n-type structures (dopant concentration between 1.5x10e16 cm-3 and 1.5x10e19 cm-3) on a lightly doped p-type silicon substrate (doped to 1.9x10e15 cm-3) have been examined by a photoemission electron microscope equipped with a high-pass energy filter and by an ultra-high vacuum scanning low energy electron microscope. High contrast have been observed between the n-type areas and the p-type substrate and its monotone dependency on the doping level of structures has been manifested. The relation between the energy spectra of photoelectrons and the doping level has been studied, too. The scanning electron microscope images obtained with the landing energy of the primary beam in the low keV range exhibit contrasts similar to those appearing in the full threshold photoemission micrographs. Pracoviště Ústav přístrojové techniky Kontakt Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Rok sběru 2010
Počet záznamů: 1