Počet záznamů: 1
Electron Backscattering from Real and In-Situ Treated Surfaces
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SYSNO ASEP 0205235 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Ostatní články Název Electron Backscattering from Real and In-Situ Treated Surfaces Tvůrce(i) Frank, Luděk (UPT-D) RID, SAI, ORCID
Steklý, Richard (UPT-D)
Zadražil, Martin (UPT-D)
El Gomati, M. M. (GB)
Müllerová, Ilona (UPT-D) RID, SAI, ORCIDZdroj.dok. Microchimica Acta. - : Springer - ISSN 0026-3672
Roč. 132, 2-4 (2000), s. 179-188Poč.str. 10 s. Jazyk dok. eng - angličtina Země vyd. AT - Rakousko Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika CEP IAA1065901 GA AV ČR - Akademie věd GA202/99/0008 GA ČR - Grantová agentura ČR CEZ AV0Z2065902 - UPT-D Anotace Significant differences in backscattered electron yields exist between the surfaces cleaned by methods used in electron microscopy and spectroscopy. These differences have been observed for Au, Cu and Al specimens, and are interpreted on the basis simulated BSE yields. Composition and thickness of the surface contamination layers, responsible for the differences, are estimated. The results (7 nm of carbon on Au or 3 nm of oxide on AL) remain within expectation and indicate that the BSE yield measurement and BSE images should be interpreted cautiously. Peculiar results are obtained for Cu, perhaps due to a different cleaning procedure. A new concept of an information depth for the BSE signal is introduced as a depth within which the total BSE yield can be modelled as composed of the yields of layers proportional to their thickness weighted by the escape depths. This concept proved satisfactory for thin surface layers and brought the information depth values 2 to 4 times smaller than first estimated, i.e. half the penetration depth. Pracoviště Ústav přístrojové techniky Kontakt Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Rok sběru 2001
Počet záznamů: 1