Počet záznamů: 1
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure
- 1.Hájek, František - Hospodková, Alice - Oswald, Jiří - Slavická Zíková, Markéta
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure.
Proceedings of the 8th Student scientific conference of solid state engineering and materials. Praha: České vysoké učení technické v Praze, 2018 - (Dragounová, K.; Koubský, T.; Kalvoda, L.; Čapek, J.; Trojan, K.; Kolenko, P.), s. 42-45. ISBN 978-80-01-06511-2.
[Student scientific conference of solid state engineering and materials /8./. Sedliště (CZ), 17.09.2018-21.09.2018]
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
http://hdl.handle.net/11104/0294317
Počet záznamů: 1