Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond

Remeš, Zdeněk - Stuchlík, Jiří - Stuchlíková, The-Ha - Dragounová, K. - Ashcheulov, Petr - Taylor, Andrew - Mortet, Vincent - Poruba, Aleš
Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond.
Physica Status Solidi A. Roč. 216, č. 21 (2019), s. 1-6, č. článku 1900241. ISSN 1862-6300. E-ISSN 1862-6319
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.759, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1002/pssa.201900241
http://hdl.handle.net/11104/0301632