Počet záznamů: 1
Preparation and properties of thick intentionally undopted GaInP/GaAs layers
- 1.Nohavica, Dušan - Gladkov, Petar - Žďánský, Karel - Pospíšil, S. (ed.) - Smith, K.M. (ed.) - Wilhelm, I. (ed.)
Preparation and properties of thick intentionally undopted GaInP/GaAs layers.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 434, No 1 Special Issue (1999), s. 164-168. ISSN 0168-9002. E-ISSN 1872-9576.
[International Workshop on Gallium Arsenide and Related Compounds /6./. Prague, 22.06.1998-26.06.1998]
Impakt faktor: 0.921, rok: 1999
http://hdl.handle.net/11104/0113683
Počet záznamů: 1