Počet záznamů: 1
Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers
- 1.Hubáček, Tomáš - Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Kuldová, Karla - Hulicius, Eduard
Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 155-155.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
http://hdl.handle.net/11104/0289016
Počet záznamů: 1