Počet záznamů: 1
Surface structure of MOVPE-prepared GaP(111)B
- 1.Kleinschmidt, P. - Mutombo, Pingo - Romanyuk, Olexandr - Himmerlich, M. - Berthold, T. - Wen, X. - Zhao, W. - Nägelein, A. - Steidl, M. - Paszuk, A. - Brückner, S. - Supplie, O. - Krischok, S. - Hannappel, T.
Surface structure of MOVPE-prepared GaP(111)B.
31th DGKK Workshop Epitaxy of III/V Semiconductors. Berlin: DGKK, 2016. s. 25-25.
[31th DGKK Workshop Epitaxy of III/V Semiconductors. 08.12.2016-09.12.2016, Duisburg]
http://hdl.handle.net/11104/0268897
Počet záznamů: 1