Počet záznamů: 1
GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD
- 1.Hospodková, Alice - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Pangrác, Jiří - Petříček, Otto
GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD.
Materials Research Express. Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. E-ISSN 2053-1591
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.151, rok: 2017
http://hdl.handle.net/11104/0279501
Počet záznamů: 1