Počet záznamů: 1
Development of n-on-p silicon sensors for very high radiation environments
- 1.Unno, Y. - Affolder, A.A. - Allport, P.P. - Bates, R. - Betancourt, C. - Böhm, Jan - Brown, H. - Buttar, C. - Carter, J. R. - Casse, G. - Mikeštíková, Marcela … celkem 74 autorů
Development of n-on-p silicon sensors for very high radiation environments.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S24"-"S30". ISSN 0168-9002. E-ISSN 1872-9576
Impakt faktor: 1.207, rok: 2011
http://dx.doi.org/10.1016/j.nima.2010.04.080
http://hdl.handle.net/11104/0198717
Počet záznamů: 1