InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Oswald, Jiří - Vyskočil, Jan - Kuldová, Karla - Šimeček, Tomislav - Hazdra, P. - Caha, O.
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
Journal of Crystal Growth. Roč. 312, č. 8 (2010), 1383-1387. ISSN 0022-0248. E-ISSN 1873-5002
Impakt faktor: 1.737, rok: 2010
http://hdl.handle.net/11104/0185175