The metallic nanoparticles integrated into thin layers of hydrogenated amorphous silicon

0522068 - FZÚ 2020 RIV DE eng A - Abstrakt
Stuchlík, Jiří - Stuchlíková, The-Ha - Remeš, Zdeněk - Čermák, Jan - Kupčík, Jaroslav - Král, Karel
The metallic nanoparticles integrated into thin layers of hydrogenated amorphous silicon.
Book of Abstracts of IWEPNM 2019. Berlin: Technische Universität Berlin Institut für Festkörperphysik, 2019 - (Machón, M.). s. 68-68
[International Winterschool on Electronic Properties of Novel Materials (IWEPNM) /33./. 09.03.2019-16.03.2019, Kirchberg]
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J; GA MŠMT(CZ) LTC17029
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: metallic nanoparticles * hydrogenated amorphous silicon
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://www.iwepnm.org/fileadmin/user_upload/IWEPNM2019-Abstractbook.pdf

The metallic nanoparticles integrated into thin semiconductor layer to increase the optical absorption below the optical absorption edge in the near infrared region are expected to significantly degrade the electronic quality of the semiconductor due to the recombination centers introduced in the energy band gap. Contrary to these expectations, our new measurements on PIN structures indicates only meager impact of embedded NPs on the current - voltage characteristics. Here we present our novel PIN structures based on a-Si:H thin films with embedded Sn NPs characterized by electron microscopy (SEM and HRTEM), atomic force microscopy (AFM), photothermal deflection spectroscopy (PDS), constant photocurrent method (CPM), photoluminescence (PL) and electroluminescence (EL). The temperature dependence of the electrical conductivity and the changes of its activation energy are discussed in the frame of the theoretical model of the transfer of the charge carriers in these structures.

Trvalý link: http://hdl.handle.net/11104/0306572