MOVPE growth of InGaN/GaN MQW nitride scintillator structure

0479290 - FZÚ 2018 RIV FR eng C - Konferenční příspěvek (zahraniční konf.)
Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hývl, Matěj - Zíková, Markéta - Hulicius, Eduard
MOVPE growth of InGaN/GaN MQW nitride scintillator structure.
EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. Grenoble, 2017 - (Eymery, J.), s. 114-117
[EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. Grenoble (FR), 18.06.2017-21.06.2017]
Grant CEP: GA ČR GA16-11769S; GA MŠMT LO1603
GRANT EU: European Commission(XE) CZ.2.16/3.1.00/24510
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * nitrides * scintillator * quantum well
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
http://inac.cea.fr/en/Phocea/Page/index.php?id=215&ref=193

Fast scintillators with decay time of few nanoseconds are necessary for scanning electron microscopes in inspection machines in electronic industry. Serious morphological problem of the InGaN/GaN MQWs is formation of V-pits. These V-pits originate in InGaN QWs and they are created due to dislocations. InGaN/GaN structures with a different number of QWs and different thickness of GaN covering layers were grown, measured by AFM and their photoluminescence (PL) properties were compared. V-pit size (depth and diameter) depends on the total thickness of InGaN layers and on the growth rate, not on the capping layer thickness. Fast exciton QW PL can be increased by the thickness of GaN capping layer, higher In content and lower growth rate of the capping layer.

Trvalý link: http://hdl.handle.net/11104/0275558