Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives

0474082 - FZÚ 2018 RIV NL eng J - Článek v odborném periodiku
Hájková, Zdeňka - Ledinský, Martin - Vetushka, Aliaksi - Stuchlík, Jiří - Müller, Martin - Fejfar, Antonín - Bouša, Milan - Kalbáč, Martin - Frank, Otakar
Photovoltaic characterization of graphene/silicon Schottky junctions from local and macroscopic perspectives.
Chemical Physics Letters. Roč. 676, May (2017), s. 82-88. ISSN 0009-2614. E-ISSN 1873-4448
Grant CEP: GA ČR GA14-15357S
Institucionální podpora: RVO:68378271 ; RVO:61388955
Klíčová slova: CVD graphene * microcrystalline silicon * solar cells * Schottky junctions * current-voltage curves * C-AFM
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.); Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) (UFCH-W)
Impakt faktor: 1.686, rok: 2017

We present Schottky junction solar cell composed of CVD graphene transferred onto hydrogenated amorphous and microcrystalline silicon (µc-Si:H). The obtained results proved that the thickness of silicon oxide barrier at graphene-µc-Si:H interface is one of the key parameters that determines the solar cell performance. We demonstrated sample with open-circuit voltage of 445 mV, a remarkable value for undoped graphene-based solar cell. Photovoltaic characteristics of this sample remained stable over 11 months and could be further improved by doping. The graphene/silicon junctions were studied both macroscopically with solar simulator and locally by C-AFM. Very good correlation between both independent measurements proved C-AFM as highly useful tool for photovoltaic characterization on nano- and micrometer scale.
Trvalý link: http://hdl.handle.net/11104/0271193