Resistive switch mechanism of Au/ZnO/Au crossbar structure

0471058 - FZÚ 2017 RIV CZ eng A - Abstrakt
Chang, Y.Y. - Ponpigul, P. - Thaomonpun, J. - Chang, Y.C. - Remeš, Zdeněk - Hsu, H.S.
Resistive switch mechanism of Au/ZnO/Au crossbar structure.
Development of Materials Science in Research and Education. Book of Abstracts of the 26th Joint Seminar. Praha: Institute of Physics of the Czech Academy of Sciences, v. v. i., 2016 - (Kožíšek, Z.; Král, R.; Zemenová, P.). s. 17. ISBN 978-80-905962-4-5.
[Joint Seminar Development of Materials Science in Research and Education /26./. 29.08.2016-02.09.2016, Pavlov]
Grant CEP: GA ČR GC16-10429J
Grant ostatní: AV ČR(CZ) MOST-15-04; AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce; Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: ZnO * resistive switch
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

In this paper, this resistive switch mechanism of the Au/ZnO/Au crossbar structure was investigated. Au has been considered as a good metallic electrode for its low oxygen affinity and high stability. Au/ZnO/Au crossbar was deposited using sputtering. The crossbar area size is 100 um2 with ZnO layer thickness ∼140 nm and Au electrodes layer ∼60 nm. The bipolar resistive switching behavior can be observed in our device, which the set voltage (VSET) and the reset voltage (VRESET) is -2.25V. By further electrical transport analysis, the space-charge-limited-current (SCLC) dominate the carrier transport in the high resistance state (HRS). On the other, low resistance (LRS) is follow the ohmic transport. Our result
shows that the oxygen ion migration plays an important role in the resistive switch mechanism.
Trvalý link: http://hdl.handle.net/11104/0268523