Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

0464495 - FZÚ 2017 RIV ZA eng A - Abstrakt
Hospodková, Alice - Nikl, Martin - Pacherová, Oliva - Oswald, Jiří - Foltynski, B. - Brůža, P. - Pánek, D. - Beitlerová, Alena - Oeztuerk, M. - Heuken, M. - Hulicius, Eduard
Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications.
SMEOS 2016 - Sensors, MEMS and Electro-Optical Systems /4./.Abstracts. Skukuza: SPIE, 2016 - (Schutte, C.). s. 62-62
[SMEOS 2016 - Sensors, MEMS and Electro-Optical Systems /4./. 12.09.2016-14.09.2016, Skukuza]
Grant CEP: GA ČR GA16-11769S; GA MŠMT(CZ) LM2011026
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN QWs * yellow luminescence * photoluminescence * x-ray diffraction
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

InGaN/GaN multiple quantum well structures (QW) were prepared by metal-organic vapour phase epitaxy (MOVPE) and characterized them by fine X-ray diffraction measurements. We demonstrate their suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft X-ray source in extended dynamical and time scales. The photo-luminescence and radio-luminescence were measured: we have shown that the ratio of the intensity of QW exciton luminescence to the intensity of the yellow luminescence (YL) band IQW/IYL depends strongly on the type and intensity of excitation. Slower scintillation decay measured at YL band maximum confirmed the presence of several radiative recombination centres responsible for wide YL band, which also partially overlap with the QW peak.
Trvalý link: http://hdl.handle.net/11104/0263376