MIR LED-like structures with high temperature superlinear luminescence

0463669 - FZÚ 2017 RIV PT eng A - Abstrakt
Mikhailova, M. P. - Ivanov, E.V. - Danilov, L.V. - Kalinina, K.V. - Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Hulicius, Eduard
MIR LED-like structures with high temperature superlinear luminescence.
SMMO 2016. Lisbon: COST, 2016 - (Pereira, M.). s. 52
[Annual Conference of COST Action MP1204 and the International Conference on Semiconductor Mid-IR and THZ Materials and Optics SMMO2016. /4./. 21.03.2016-24.03.2016, Lisbon]
Grant CEP: GA MŠMT(CZ) LM2011026; GA ČR GA16-11769S; GA ČR GA13-15286S; GA ČR(CZ) GP14-21285P; GA MŠMT LO1603
Grant ostatní: COST(XE) MP1204
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * InAsSb * quantum well * Mid-IR * impact ionization
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

AlSb/InAsSb/AlSb based heterostructures and nanostructures with quantum wells (QWs) grown on GaSb are promising materials for the optoelectronic devices for near- and mid-IR spectral regions. GaSb-based structures with a deep AlSb/InAsSb/AlSb QW were prepared. The impact ionization by the electrons heated at AlSb/QW interface was observed. Two-band superlinear electroluminescence with the highest intensity near 375 K occurs. Presented results for the light-emitting diodes with deep InAsSb QW pave the way for mid-IR devices operating in wide temperature range from –200 C up to +200°C.
Trvalý link: http://hdl.handle.net/11104/0262781