Graphene Field-Effect Transistor as a Probe of Doping by Adsorbed Oxygen Molecules

0459785 - ÚFCH JH 2017 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Blechta, Václav - Mergl, Martin - Drogowska, Karolina - Kučera, Lukáš - Valeš, Václav - Červenka, Jiří - Kalbáč, Martin
Graphene Field-Effect Transistor as a Probe of Doping by Adsorbed Oxygen Molecules.
XXXVI. Moderní elektrochemické metody. Sborník přednášek. Ústí nad Labem: Best servis, 2016 - (Navrátil, T.; Fojta, M.; Schwarzová, K.), s. 18-22. ISBN 978-80-905221-4-5.
[Moderní elektrochemické metody /36./. Jetřichovice (CZ), 23.05.2016-27.05.2016]
Grant CEP: GA ČR GA13-21704S; GA ČR(CZ) GBP208/12/G016
Institucionální podpora: RVO:61388955 ; RVO:68378271
Klíčová slova: graphene * sensor * transistor
Kód oboru RIV: CG - Elektrochemie

Graphene has high potential in chemical sensing, thus understanding adsorption and charge transfer between graphene and adsorbed molecules is essential. We show that graphene field-effect transistor exhibits a moderate sensoric response towards oxygen at temperature of 150 °C. Field-effect transistors serve as a tool to probe electronic properties of graphene. We demonstrate that adsorption of oxygen molecules onto graphene leads to an upshift of Dirac point and light changes in mobility of charge carriers.
Trvalý link: http://hdl.handle.net/11104/0259948