Počet záznamů: 1
Secondary electron contrast in doped semiconductor with presence of a surface ad-layer
- 1.0335263 - ÚPT 2010 RIV AT eng C - Konferenční příspěvek (zahraniční konf.)
Mika, Filip - Hovorka, Miloš - Frank, Luděk
Secondary electron contrast in doped semiconductor with presence of a surface ad-layer.
MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. Graz: Verlag der Technischen Universität, 2009, Vol. 1: 199-200. ISBN 978-3-85125-062-6.
[MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./. Graz (AT), 30.08.2009-04.09.2009]
Grant CEP: GA ČR GP102/09/P543; GA AV ČR IAA100650803
Výzkumný záměr: CEZ:AV0Z20650511
Klíčová slova: dopant contrast * secondary electrons * semiconductor
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
http://www.univie.ac.at/asem/Graz_MC_09/papers/51426.pdf
The scanning electron microscopy (SEM) has proven itself efficient for determining dopant concentrations in semiconductors. Image contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, further examination shows the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of an ad-layer on the semiconductor surface.
Trvalý link: http://hdl.handle.net/11104/0179773
Počet záznamů: 1