Počet záznamů: 1
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf.sub.0.5./sub.Zr.sub.0.5./sub.O.sub.2./sub. devices by control of oxygen-deficient layer
SYS 0553457 005 20231122150350.1 014 $a 85121828452 $2 SCOPUS 014 $a 000725856400001 $2 WOS 017 70
$a 10.1088/1361-6528/ac3a38 $2 DOI 101 0-
$a eng 102 $a GB 200 1-
$a High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer 215 $a 10 s. 463 -1
$1 001 cav_un_epca*0254430 $1 011 $a 0957-4484 $e 1361-6528 $1 200 1 $a Nanotechnology $v Roč. 33, č. 8 (2022) $1 210 $c Institute of Physics Publishing 608 $a Article 610 $a interfacial layer 610 $a annealing temperature 610 $a remnant polarization 610 $a sub-5 nm HZO 610 $a wakeup free 610 $a TEM 610 $a XPS 700 -1
$3 cav_un_auth*0420479 $a Yadav $b M. $y KR 701 -1
$3 cav_un_auth*0420488 $a Kashir $b Alireza $p FZU-D $i Analýza funkčních materiálů $j Analysis of Functional Materials $y IR $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0299153 $a Oh $b S. $y KR 701 -1
$3 cav_un_auth*0428657 $a Nikam $b R.D. $y KR 701 -1
$3 cav_un_auth*0261327 $a Kim $b H. $y KR 701 -1
$3 cav_un_auth*0428658 $a Jang $b H. $y KR 701 -1
$3 cav_un_auth*0420480 $a Hwang $b H. $y KR 856 $u https://doi.org/10.1088/1361-6528/ac3a38 $9 RIV
Počet záznamů: 1