High temperature PIN diodes based on amorphous hydrogenated silicon carbide and boron-doped diamond thin films

Stuchlíková, T.-H., Remeš, Z., Mortet, V., Ashcheulov, P., Krivyakin, G.K., Volodin, V., Stuchlík, J. High temperature PIN diodes based on amorphous hydrogenated silicon carbide and boron-doped diamond thin films. In: MACHÓN, M., ed. Book of Abstracts of IWEPNM 2019. Berlin: Technische Universität Berlin Institut für Festkörperphysik, 2019, s. 37-37. Dostupné z: https://www.iwepnm.org/fileadmin/user_upload/IWEPNM2019-Abstractbook.pdf