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Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers
- 1.Hubáček, T., Hospodková, A., Pangrác, J., Zíková, M., Oswald, J., Kuldová, K., Hulicius, E. Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers. In: Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018, s. 155-155.
Počet záznamů: 1