Increasing scintillator active region thickness by InGaN/GaN QW number

Vaněk, T., Hospodková, A., Hubáček, T., Kuldová, K., Oswald, J., Pangrác, J., Dominec, F., Zíková, M., Vetushka, A. Increasing scintillator active region thickness by InGaN/GaN QW number. In: Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018, s. 151-151.