High polarization and wake-up free ferroelectric characteristics in ultrathin Hf.sub.0.5./sub.Zr.sub.0.5./sub.O.sub.2./sub. devices by control of oxygen-deficient layer

Yadav, M., Kashir, A., Oh, S., Nikam, R.D., Kim, H., Jang, H., Hwang, H. High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer. Nanotechnology. 2022, 33(8), 085206. ISSN 0957-4484. E-ISSN 1361-6528. Dostupné z: doi: 10.1088/1361-6528/ac3a38.