Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Hájek, F., Hospodková, A., Hubík, P., Gedeonová, Z., Hubáček, T., Pangrác, J., Kuldová, K. Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design. Semiconductor Science and Technology. 2021, 36(7), 075016. ISSN 0268-1242. E-ISSN 1361-6641. Dostupné z: doi: 10.1088/1361-6641/abfe9b.