Nanocrystalline diamond electrolyte-gates in field effect transistor for a prolific aptasensing HIV-1 tat on hydrogen-terminated surface

Ahmad, N.A., Rahim, R.A., Rezek, B., Kromka, A., Ismail, N.S., Gopinath, S.C.B., Ižák, T., Procházka, V., Faudzi, F.N.M., Abidin, A.S.Z., Maidizn, N.N.M. Nanocrystalline diamond electrolyte-gates in field effect transistor for a prolific aptasensing HIV-1 tat on hydrogen-terminated surface. International Journal of Nanoelectronics and Materials. 2020, 13(2), 295-306. ISSN 1985-5761. Dostupné z: https://ijneam.unimap.edu.my/images/PDF/IJNEAM%20APR%202020/Vol_13_No_2_2020_7_295-306.pdf