Improvement of GaN crystalline quality by SiN.sub.x./sub. layer grown by MOVPE

Hospodková, A., Slavická Zíková, M., Hubáček, T., Pangrác, J., Kuldová, K., Hájek, F., Dominec, F., Vetushka, A., Hasenöhrl, S. Improvement of GaN crystalline quality by SiN_x layer grown by MOVPE. Lithuanian Journal of Physics. 2019, 59(4), 179-186. ISSN 1648-8504. E-ISSN 1648-8504. Dostupné z: doi: 10.3952/physics.v59i4.4134.